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Hidden Charge 2e Boson: Experimental Consequences for Doped Mott Insulators

机译:隐藏的冲锋2e玻色子:掺杂莫特的实验后果   绝缘子

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摘要

We show here that many of the normal state properties of the cuprates canresult from the new charge 2e bosonic field which we have recently (Phys. Rev.Lett. {\bf 99}, 46404 (2007) and Phys. Rev. B 77, 014512 (2008)) shown to existin the exact low-energy theory of a doped Mott insulator. In particular, the 1)mid-infrared band including the non-vanishing of the restricted f-sum rule inthe Mott insulator, 2) the $T^2$ contribution to the thermal conductivity, 3)the pseudogap, 4) the bifurcation of the electron spectrum below the chemicalpotential as recently seen in angle-resolved photoemission, 5) insulatingbehaviour away from half-filling, 6) the high and low-energy kinks in theelectron dispersion and 7) T-linear resistivity all derive from the charge 2ebosonic field. We also calculate the inverse dielectric function and show that it possessesa sharp quasiparticle peak and a broad particle-hole continuum. The sharp peakis mediated by a new charge e composite excitation formed from the binding of acharge 2e boson and a hole and represents a distinctly new prediction of thistheory. It is this feature that is responsible for dynamical part of thespectral weight transferred across the Mott gap. We propose that electronenergy loss spectroscopy at finite momentum and frequency can be used to probethe existence of such a sharp feature.
机译:我们在此处显示,铜酸盐的许多常态性质可以归因于我们最近拥有的新的2e玻色子场(Phys。Rev. Lett。{\ bf 99},46404(2007)和Phys。Rev. B 77, 014512(2008))在掺杂的Mott绝缘子的精确低能理论中存在。特别是,1)中红外波段,包括在Mott绝缘子中不限制f-sum规则的消失,2)$ T ^ 2 $对导热率的贡献,3)伪间隙,4)的分叉。最近在角度分辨光发射中看到的低于化学势的电子光谱; 5)远离半填充的绝缘行为; 6)电子分散体中的高能和低能扭结; 7)T线性电阻率均来自电荷2电动势。我们还计算了逆介电函数,表明它具有一个尖锐的准粒子峰和一个宽的粒子-孔连续体。锋利的峰由电荷2e玻色子和空穴的结合形成的新的电荷e复合激发介导,代表了该理论的明显新预测。正是这个特征负责跨莫特间隙转移的光谱权重的动态部分。我们建议在有限的动量和频率下的电子能量损失谱可以用来探测这种尖锐特征的存在。

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